Germanium Pnp Transistors
Germanium Pnp Transistors
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Silicon-germanium Heterojunction Bipolar Transistors $109 A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications. It covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. |
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SiGe Heterojunction Bipolar Transistors $150 SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering. |
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Applications of Silicon-Germanium Heterostructure Devices $189.95 This text reviews devices and technology used to grow and characterize Group IV alloy films. It covers heterojunction transistors, their relevance in developing the technologies involving strained layers, device design and simulation of silicon bipolar transistors, SiGe HBTs and MOSEFETs. |
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Transistors $134.53 This book is in Used condition |
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NTE160 $4.96 NTE160 h(FE) Min. Current gain.:20Mounting Style:TPackage Style:TO-72Military/High-Rel:NV(BR)CEO (V):20âAbsolute Max. Power Diss. (W):200mf(T) Min. (Hz) Transition Freq:400MI(C) Max. (A):10mV(BR)CBO (V):30 Nota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part… |