Enhancement Mode Mosfet
Enhancement Mode Mosfet
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Evolution Series 4-Channel Mosfet Amplifier – 2800W Max $218.63 Soundstorm Ev4.2800 Evolution Series 4-Channel Mosfet Amplifier (2800W Max 1400W X 2 @ 4 Ohm Bridged 300W X 4 @ 4 Ohm)Brand: SoundstormSSLEV42800Bridgeable Tri-Mode Operation2 Ohm Stereo Stable Variable Low Pass Crossover: 40 Hz – 150 Hz Fixed High Pass Crossover: 200 HzVariable 0 – 18 Db Bass BoostVariable Input Gain ControlPower & Protection LED IndicatorsThermal, Overload & Speaker Short ProtectionLine & Speaker Level Inputs Chrome Plated RCA Connectors & TerminalsRemote Subwoofer Level ControlFreq Resp: 9 Hz – 50 Khz (+/-3 Db) Signal-To-Noise Ratio: 105 DbThd @ Rms Output: 0.01%Damping Factor: 125+Dim: 10″W X 2.25″H2800W Max1400W X 2 @ 4 Ohm Bridged300W X 4 @ 4 OhmDim: 22″LProduct Class: Car Stereo AmpsUPC: 791489112567Manufacturer’s Warranty: Six Years |
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Evolution Series 4-Channel Mosfet Amplifier – 2000W Max $162.38 Soundstorm Ev4.2000 Evolution Series 4-Channel Mosfet Amplifier (2000W Max 1000W X 2 @ 4 Ohm Bridged 220W X 4 @ 4 Ohm)Brand: SoundstormSSLEV42000Bridgeable Tri-Mode Operation2 Ohm Stereo Stable Variable Low Pass Crossover: 40 Hz – 150 Hz Fixed High Pass Crossover: 200 HzVariable 0 – 18 Db Bass BoostVariable Input Gain ControlPower & Protection LED IndicatorsThermal, Overload & Speaker Short ProtectionLine & Speaker Level Inputs Chrome Plated RCA Connectors & TerminalsRemote Subwoofer Level ControlFreq Resp: 9 Hz – 50 Khz (+/-3 Db) Signal-To-Noise Ratio: 105 DbThd @ Rms Output: 0.01%Damping Factor: 125+Dim: 10″W X 2.25″H2000W Max1000W X 2 @ 4 Ohm Bridged220W X 4 @ 4 OhmDim: 15.5″LProduct Class: Car Stereo AmpsUPC: 791489112581Manufacturer’s Warranty: Six Years |
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Cougar 3000 Watt 6/5/4/3 Channel Car Hifi Amplifier Mosfet $69.9 Insane 6 Channel Mosfet design amplifier for connecting multiple speakers, from Cougar. 3000 Watt – let the games begin. Bridgeable at 6/5/4/3/2 channels. The latest amplifier from the boys at Cougar outdoes itself with 3000W max power – made possible through modern Mosfet technology and 6 roaring channels. With power to spare and well thought out features, this amplifier transforms you car into a force to be reckoned with. As always, Cougar excels at more than just the technical aspects, taking the amps design to the next level. Amplifier with cross over network and volume control. New optics and new Carbu technology. Stable at 2 Ohm in stereo mode. |
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Evolution Series 4-Channel Mosfet Amplifier – 1600W Max $141.13 Soundstorm Ev4.1600 Evolution Series 4-Channel Mosfet Amplifier (1600W Max 800W X 2 @ 4 Ohm Bridged 180W X 4 @ 4 Ohm)Brand: SoundstormSSLEV41600Bridgeable Tri-Mode Operation 2 Ohm Stereo Stable Variable Low Pass Crossover: 40 Hz – 150 Hz Fixed High Pass Crossover: 200 HzVariable 0 – 18 Db Bass BoostVariable Input Gain ControlPower & Protection LED IndicatorsThermal, Overload & Speaker Short ProtectionLine & Speaker Level Inputs Chrome Plated RCA Connectors & TerminalsRemote Subwoofer Level ControlFreq Resp: 9 Hz – 50 Khz (+/-3 Db) Signal-To-Noise Ratio: 105 DbThd @ Rms Output: 0.01%Damping Factor: 125+Dim: 10″W X 2.25″H1600W Max800W X 2 @ 4 Ohm Bridged180W X 4 @ 4 OhmDim: 13.5″LProduct Class: Car Stereo AmpsUPC: 791489112598Manufacturer’s Warranty: Six Years |
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MTX TE1004 Thunder Elite Amplifier 125 W x 4 $445.11 1900W Max, 4-Channel Thunder Elite Amplifier… |
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Power MOSFETs: N- and P-Channel Enhancement-Mode MOS Field-Effect Transistors … |
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High-voltage lateral MOS-gated FETs in Gallium Nitride. $108 Gallium Nitride (GaN) is of interest for high-voltage and high-temperature devices due to its remarkable material properties like wide bandgap (3.4 eV), large critical electric field (3 MV/cm) and high electron mobility in AlGaN/GaN heterostructure. Furthermore, GaN high-voltage devices especially lateral MOS-gated FETs can be integrated with control circuits, microwave devices and optoelectronic devices on one single GaN chip for a variety of applications. This research examines the capability of GaN MOS-gated FETs for logic and high-voltage switching applications by focusing on developing high quality GaN MOS interface, normally-off inversion-mode GaN MOSFET and high-voltage GaN MOS-gated FETs.;The insulator-GaN interface quality is crucial in creating high performance GaN MOS-gated devices. GaN MOS capacitors were fabricated to evaluate and optimize GaN MOS interface. In this thesis, we developed a new GaN MOS process resulting in extremely low interface state density (3.8x1010 cm-2eV-1 at 0.19 eV below the conduction band) and more importantly decreasing tread from conduction band to middle bandgap, showing potential inversion-mode GaN MOSFET.;Subsequently we demonstrated the first enhancement-mode inversion-mode GaN MOSFETs. Field-effect mobility up to 167 cm2/V-s (17% of bulk mobility) has been extracted on 100 mum long channel MOSFETs on both p and n-GaN/sapphire substrate. This record achievement still stands after nearly three years. Hall measurements on GaN MOS-gated Hall bar indicate that GaN MOS can provide about 2--4X mobility and 2X channel carrier density as compared to SiC MOS, only 2--3X lower than that of silicon MOS. By connecting a positive threshold voltage MOSFET and a negative threshold voltage MOSFET, we demonstrated the first GaN NMOS inverter with good voltage transfer characteristics, indicating potential use of GaN MOSFETs for digital applications. The fabricated MOSFETs show no mobility orientation dependence within c-plane, no current |